Chin. Phys. Lett.  2024, Vol. 41 Issue (4): 047502    DOI: 10.1088/0256-307X/41/4/047502
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn$_{3}$Pt
Meng Zhu, Jianting Dong, Xinlu Li, Fanxing Zheng, Ye Zhou, Kun Wu, and Jia Zhang*
School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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Meng Zhu, Jianting Dong, Xinlu Li et al  2024 Chin. Phys. Lett. 41 047502
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Abstract In comparison to ferromagnets, antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices, including fast spin dynamics, vanishing stray fields and robust against external magnetic field, etc. However, unlike ferromagnetic orders, which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions, the antiferromagnetic order (i.e., Néel vector) cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets. Recently discovered spin-splitting noncollinear antiferromagnets, such as Mn$_{3}$Pt with momentum-dependent spin polarization due to their special magnetic space group, make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions. Through first-principles calculations, we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn$_{3}$Pt/perovskite oxides/Mn$_{3}$Pt antiferromagnetic tunnel junctions. We also reveal the switching dynamics of Mn$_{3}$Pt thin film under magnetic fields using atomistic spin dynamic simulation. Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.
Received: 16 January 2024      Published: 09 April 2024
PACS:  75.40.Gb (Dynamic properties?)  
  75.40.Mg (Numerical simulation studies)  
  75.50.Ee (Antiferromagnetics)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/41/4/047502       OR      https://cpl.iphy.ac.cn/Y2024/V41/I4/047502
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Meng Zhu
Jianting Dong
Xinlu Li
Fanxing Zheng
Ye Zhou
Kun Wu
and Jia Zhang
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[34]See the Supplemental Material for details of Mn$_{3}$Pt switching dynamics, magnetic anisotropy energy as a function of film thickness, interface formation energy, layer-resolved density of states, and TMR as a function of energy in Mn$_{3}$Pt/PbTiO$_{3}$/Mn$_{3}$Pt tunnel junction, and the computational details on self-consistent, transmission of magnetic tunnel junction and lowest decay rates of the evanescent states for other perovskites, band structure of bulk Mn$_{3}$Pt.
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