| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Large-Area Monolayer n-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection |
| Sai Jiang1*, Lichao Peng1, Xiaosong Du1, Qinyong Dai2, Jianhang Guo2, Jianhui Gu1, Jian Su1, Ding Gu1, Qijing Wang2, Huafei Guo1, Jianhua Qiu1, and Yun Li2* |
1School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China
2National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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| Cite this article: |
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Sai Jiang, Lichao Peng, Xiaosong Du et al 2023 Chin. Phys. Lett. 40 038101 |
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Abstract We fabricated monolayer n-type two-dimensional crystalline semiconducting films with millimeter-sized areas and remarkable morphological uniformity using an antisolvent-confined spin-coating method. The antisolvent can cause a downstream Marangoni flow, which improves the film morphologies. The deposited crystalline monolayer films exhibit excellent thermal stabilities after annealing, which reveals the annealing-induced enhancement of crystallinity. The transistors based on the n-type monolayer crystalline films show linear output characteristics and superior electron mobilities. The improved charge injection between monolayer films and Au electrodes results from the energy level shift as the films decrease to the monolayer, which leads to a lower injection barrier. This work demonstrates a promising method for fabricating air-stable, low-cost, high-performance, and large-area organic electronics.
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Received: 14 December 2022
Published: 08 March 2023
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| PACS: |
81.05.Fb
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(Organic semiconductors)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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81.05.-t
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(Specific materials: fabrication, treatment, testing, and analysis)
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