| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Unconventional Nonreciprocal Voltage Transition in Ag$_{2}$Te Nanobelts |
| Peng-Liang Leng1†, Xiang-Yu Cao1†, Qiang Ma1, Lin-Feng Ai1, Yu-Da Zhang1, Jing-Lei Zhang2, and Fa-Xian Xiu1* |
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
2Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
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| Cite this article: |
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Peng-Liang Leng, Xiang-Yu Cao, Qiang Ma et al 2023 Chin. Phys. Lett. 40 127201 |
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Abstract Nonreciprocal effects are consistently observed in noncentrosymmetric materials due to the intrinsic symmetry breaking and in high-conductivity systems due to the extrinsic thermoelectric effect. Meanwhile, nonreciprocal charge transport is widely utilized as an effective experimental technique for detecting intrinsic unidirectional electrical contributions. Here, we show an unconventional nonreciprocal voltage transition in topological insulator Ag$_{2}$Te nanobelts. The nonreciprocal voltage develops from nearly zero to giant values under the applied current $I_{\rm ac}$ and external magnetic fields, while remaining unchanged under various current $I_{\rm dc}$. This unidirectional electrical contribution is further evidenced by the differential resistance ($dV/dI$) measurements. Furthermore, the transition possesses two-dimensional properties under a tilted magnetic field and occurs when the voltage between two electrodes exceeds a certain value. We propose a possible mechanism based on the development of edge channels in Ag$_{2}$Te nanobelts to interpret the phenomenon. Our results not only introduce a peculiar nonreciprocal voltage transition in topological materials but also enrich the understanding of the intrinsic mechanism that strongly affects nonreciprocal charge transport.
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Received: 11 August 2023
Editors' Suggestion
Published: 30 November 2023
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| PACS: |
72.20.Ht
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(High-field and nonlinear effects)
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73.43.Fj
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(Novel experimental methods; measurements)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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