| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions |
| Wenkai Zhu1,2†, Shihong Xie1,3†, Hailong Lin1,2†, Gaojie Zhang4,5, Hao Wu4,5, Tiangui Hu1,2, Ziao Wang1,2, Xiaomin Zhang1,2, Jiahan Xu1, Yujing Wang1,2, Yuanhui Zheng1, Faguang Yan1, Jing Zhang1, Lixia Zhao1,6, Amalia Patanè3, Jia Zhang5,7, Haixin Chang4,5*, and Kaiyou Wang1,2* |
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
4Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
5Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
6School of Electrical and Electronic Engineering, Tiangong University, Tianjin 300387, China
7School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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| Cite this article: |
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Wenkai Zhu, Shihong Xie, Hailong Lin et al 2022 Chin. Phys. Lett. 39 128501 |
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Abstract A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature ($T = 300$ K) in vdW MTJs based on a thin ($ < 10$ nm) semiconductor spacer WSe$_{2}$ layer embedded between two Fe$_{3}$GaTe$_{2}$ electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at $T = 10$ K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.
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Received: 14 November 2022
Express Letter
Published: 18 November 2022
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| PACS: |
85.75.Dd
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(Magnetic memory using magnetic tunnel junctions)
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73.43.Qt
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(Magnetoresistance)
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75.50.-y
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(Studies of specific magnetic materials)
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61.82.Fk
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(Semiconductors)
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