| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array |
| Xiaorui Wang1 and Shijie Xu1,2* |
1Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
2Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200438, China
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| Cite this article: |
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Xiaorui Wang and Shijie Xu 2022 Chin. Phys. Lett. 39 107801 |
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Abstract Two analytic expressions of temperature-dependent peak positions employing the localized-state ensemble (LSE) luminescence model are deduced for the cases of ${\Delta E=E_{\rm a}-E}_{0} >0$ and $ < 0$, respectively, under the first-order approximation of Taylor's expansion. Then, the deduced formulas are applied to examine the experimental variable-temperature photoluminescence data of non- and semi-polar InGaN/GaN quantum-wells (QWs) array by jointly considering the monotonic bandgap shrinking described by Pässler's empirical formula. S-shaped temperature dependence of luminescence peaks of both non- and semi-polar QWs is well reproduced with the analytic formulas. As a result, the localization depths are found to be 31.5 and 32.2 meV, respectively, for non- and semi-polar QWs.
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Received: 01 August 2022
Published: 25 September 2022
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| PACS: |
78.55.Hx
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(Other solid inorganic materials)
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71.23.-k
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(Electronic structure of disordered solids)
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71.55.Jv
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(Disordered structures; amorphous and glassy solids)
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78.67.De
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(Quantum wells)
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