| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Constructing Low-Dimensional Quantum Devices Based on the Surface State of Topological Insulators |
| Tian-Yi Zhang1, Qing Yan2,3, and Qing-Feng Sun2,3,4* |
1School of Physical Science and Technology, Soochow University, Suzhou 215006, China
2International Center for Quantum Material, School of Physics, Peking University, Beijing 100871, China
3Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
4CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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| Cite this article: |
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Tian-Yi Zhang, Qing Yan, and Qing-Feng Sun 2021 Chin. Phys. Lett. 38 077303 |
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Abstract We propose a new method to construct low-dimensional quantum devices consisting of the magnetic topological insulators. Unlike previous systems based on locally depleting two-dimensional electron gas in semiconductor heterojunctions, magnetization provides a simpler and rewriteable fabrication way. The motion of electrons can be manipulated through the domain wall formed by the boundary between different magnetic domains. Here, three devices designed by local magnetization are presented. For the quantum point contact, conductance exhibits quantized plateaus with the increasing silt width between two magnetic domains. For the quantum dot, conductance shows pronounced peaks as the change of gate voltage. Finally, for the Aharonov–Bohm ring, conductance oscillates periodically with the external magnetic field. Numerical results show that the transport of these local magnetization systems is identical to that of the previous systems based on depleting two-dimensional electron gas, and the only difference is the approach of construction. These findings may pave the way for realization of low-power-consumption devices based on magnetic domain walls.
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Received: 29 March 2021
Published: 05 July 2021
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| PACS: |
73.23.-b
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(Electronic transport in mesoscopic systems)
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75.60.Ch
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(Domain walls and domain structure)
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73.21.La
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(Quantum dots)
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| Fund: Supported by the National Key R&D Program of China (Grant No. 2017YFA0303301), the National Natural Science Foundation of China (Grant Nos. 11921005 and 11574007), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and Beijing Municipal Science and Technology Commission, China (Grant No. Z191100007219013). |
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