| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Gate Tunable Supercurrent in Josephson Junctions Based on Bi$_{2}$Te$_{3}$ Topological Insulator Thin Films |
| Wei-Xiong Wu1†, Yang Feng1,2†, Yun-He Bai1†, Yu-Ying Jiang1†, Zong-Wei Gao1, Yuan-Zhao Li1, Jian-Li Luan1, Heng-An Zhou1, Wan-Jun Jiang1,3, Xiao Feng1,3, Jin-Song Zhang1,3, Hao Zhang1,3,4, Ke He1,3,4*, Xu-Cun Ma1,3, Qi-Kun Xue1,3,4, and Ya-Yu Wang1,3* |
1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China
3Frontier Science Center for Quantum Information, Beijing 100084, China
4Beijing Academy for Quantum Information Sciences, Beijing 100084, China
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| Cite this article: |
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Wei-Xiong Wu, Yang Feng, Yun-He Bai et al 2021 Chin. Phys. Lett. 38 037402 |
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Abstract We report transport measurements on Josephson junctions consisting of Bi$_{2}$Te$_{3}$ topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length $L = 134$ nm, the critical supercurrent $I_{\rm c}$ can be modulated by an electrical gate which tunes the carrier type and density of the TI film. $I_{\rm c}$ can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K $ < T < 3.8$ K while for $T < 0.7$ K the diffusive bulk modes emerge and contribute a larger $I_{\rm c}$ than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p–n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.
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Received: 24 November 2020
Published: 02 March 2021
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| PACS: |
74.45.+c
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(Proximity effects; Andreev reflection; SN and SNS junctions)
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74.50.+r
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(Tunneling phenomena; Josephson effects)
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73.20.-r
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(Electron states at surfaces and interfaces)
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| Fund: Supported by the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 51788104), and the National Key R&D Program of China (Grant No. 2017YFA0302900). |
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