Chin. Phys. Lett.  2021, Vol. 38 Issue (12): 128501    DOI: 10.1088/0256-307X/38/12/128501
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
High-Sensitivity Tunnel Magnetoresistance Sensors Based on Double Indirect and Direct Exchange Coupling Effect
Xiufeng Han1,2*, Yu Zhang1,2, Yizhan Wang1,2, Li Huang1,2, Qinli Ma1,2, Houfang Liu1,2, Caihua Wan1,2, Jiafeng Feng1,2, Lin Yin1,2, Guoqiang Yu1,2, Tian Yu3, and Yu Yan4
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2University of Chinese Academy of Sciences, Beijing 100049, China
3College of Physical Science and Technology, Sichuan University, Chengdu 610065, China
4Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012, China
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Xiufeng Han, Yu Zhang, Yizhan Wang et al  2021 Chin. Phys. Lett. 38 128501
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Abstract Detection of ultralow magnetic field requires magnetic sensors with high sensitivity and low noise level, especially for low operating frequency applications. We investigated the transport properties of tunnel magnetoresistance (TMR) sensors based on the double indirect exchange coupling effect. The TMR ratio of about 150% was obtained in the magnetic tunnel junctions and linear response to an in-plane magnetic field was successfully achieved. A high sensitivity of 1.85%/Oe was achieved due to a designed soft pinned sensing layer of CoFeB/NiFe/Ru/IrMn. Furthermore, the voltage output sensitivity and the noise level of 10.7 mV/V/Oe, 10 nT/Hz$^{1/2}$ at 1 Hz and 3.3 nT/Hz$^{1/2}$ at 10 Hz were achieved in Full Wheatstone Bridge configuration. This kind of magnetic sensors can be used in the field of smart grid for current detection and sensing.
Received: 17 September 2021      Editors' Suggestion Published: 18 November 2021
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  85.75.Ss (Magnetic field sensors using spin polarized transport)  
Fund: Supported by the Framework Project of SGCC (Grant No. 5700-202058381A-0-0-00), and the National Key Research and Development Program of China (Grant No. 2017YFA0206200).
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https://cpl.iphy.ac.cn/10.1088/0256-307X/38/12/128501       OR      https://cpl.iphy.ac.cn/Y2021/V38/I12/128501
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Xiufeng Han
Yu Zhang
Yizhan Wang
Li Huang
Qinli Ma
Houfang Liu
Caihua Wan
Jiafeng Feng
Lin Yin
Guoqiang Yu
Tian Yu
and Yu Yan
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