| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Honeycomb Lattice in Metal-Rich Chalcogenide Fe$_{2}$Te |
| Jia-Qi Guan1, Li Wang2, Pengdong Wang2, Wei Ren2, Shuai Lu2, Rong Huang2, Fangsen Li2*, Can-Li Song1,3*, Xu-Cun Ma1,3, and Qi-Kun Xue1,3,4,5 |
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
3Frontier Science Center for Quantum Information, Beijing 100084, China
4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
5Southern University of Science and Technology, Shenzhen 518055, China
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| Cite this article: |
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Jia-Qi Guan, Li Wang, Pengdong Wang et al 2021 Chin. Phys. Lett. 38 116801 |
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Abstract Two-dimensional honeycomb crystals have inspired intense research interest for their novel properties and great potential in electronics and optoelectronics. Here, through molecular beam epitaxy on SrTiO$_{3}$(001), we report successful epitaxial growth of metal-rich chalcogenide Fe$_{2}$Te, a honeycomb-structured film that has no direct bulk analogue, under Te-limited growth conditions. The structural morphology and electronic properties of Fe$_{2}$Te are explored with scanning tunneling microscopy and angle resolved photoemission spectroscopy, which reveal electronic bands cross the Fermi level and nearly flat bands. Moreover, we find a weak interfacial interaction between Fe$_{2}$Te and the underlying substrates, paving a newly developed alternative avenue for honeycomb-based electronic devices.
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Received: 29 August 2021
Editors' Suggestion
Published: 27 October 2021
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.55.-a
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(Thin film structure and morphology)
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74.70.Xa
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(Pnictides and chalcogenides)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 51788104, 11604366, 11774192, and 11634007), and the National Key R&D Program of China (Grant Nos. 2017YFA0304600 and 2018YFA0305603). |
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