| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Detection of Magnetic Gap in Topological Surface States of MnBi$_{2}$Te$_{4}$ |
| Hao-Ran Ji1†, Yan-Zhao Liu1†, He Wang2, Jia-Wei Luo1, Jia-Heng Li3,4, Hao Li5,6, Yang Wu6,7, Yong Xu3,4,8, and Jian Wang1,3,9,10* |
1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
2Department of Physics, Capital Normal University, Beijing 100048, China
3State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
4Frontier Science Center for Quantum Information, Beijing 100084, China
5School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
6Tsinghua-Foxconn Nanotechnology Research Center and Department of Physics, Tsinghua University, Beijing 100084, China
7Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
8RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
9CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
10Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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| Cite this article: |
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Hao-Ran Ji, Yan-Zhao Liu, He Wang et al 2021 Chin. Phys. Lett. 38 107404 |
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Abstract Recently, intrinsic antiferromagnetic topological insulator MnBi$_{2}$Te$_{4}$ has drawn intense research interest and leads to plenty of significant progress in physics and materials science by hosting quantum anomalous Hall effect, axion insulator state, and other quantum phases. An essential ingredient to realize these quantum states is the magnetic gap in the topological surface states induced by the out-of-plane ferromagnetism on the surface of MnBi$_{2}$Te$_{4}$. However, the experimental observations of the surface gap remain controversial. Here, we report the observation of the surface gap via the point contact tunneling spectroscopy. In agreement with theoretical calculations, the gap size is around 50 meV, which vanishes as the sample becomes paramagnetic with increasing temperature. The magnetoresistance hysteresis is detected through the point contact junction on the sample surface with an out-of-plane magnetic field, substantiating the surface ferromagnetism. Furthermore, the non-zero transport spin polarization coming from the ferromagnetism is determined by the point contact Andreev reflection spectroscopy. Combining these results, the magnetism-induced gap in topological surface states of MnBi$_{2}$Te$_{4}$ is revealed.
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Received: 02 August 2021
Editors Suggestion
Published: 29 September 2021
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| Fund: Supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0303302, 2018YFA0305604, and 2018YFA0307100), the National Natural Science Foundation of China (Grant Nos. 11888101, 11774008, 11704279, 11874035, and 51788104), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), the Beijing Natural Science Foundation (Grant Nos. Z180010 and 1202005), and the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University (Grant No. KF202001). |
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