| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Directly Determining the Interface Structure and Band Offset of a Large-Lattice-Mismatched CdS/CdTe Heterostructure |
| Quanyin Tang1, Ji-Hui Yang1,3, Zhi-Pan Liu2, and Xin-Gao Gong1,3* |
1Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China
2Key Laboratory for Computational Physical Sciences (MOE), Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Fudan University, Shanghai 200433, China
3Shanghai Qi Zhi Institute, Shanghai 200232, China
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| Cite this article: |
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Quanyin Tang, Ji-Hui Yang, Zhi-Pan Liu et al 2020 Chin. Phys. Lett. 37 096802 |
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Abstract The CdS/CdTe heterojunction plays an important role in determining the energy conversion efficiency of CdTe solar cells. However, the interface structure remains unknown, due to the large lattice mismatch between CdS and CdTe, posing great challenges to achieving an understanding of its interfacial effects. By combining a neural-network-based machine-learning method and the stochastic surface walking-based global optimization method, we first train a neural network potential for CdSTe systems with demonstrated robustness and reliability. Based on the above potential, we then use simulated annealing to obtain the optimal structure of the CdS/CdTe interface. We find that the most stable structure has the features of both bulks and disorders. Using the obtained structure, we directly calculate the band offset between CdS and CdTe by aligning the core levels in the heterostructure with those in the bulks, using one-shot first-principles calculations. Our calculated band offset is 0.55 eV, in comparison with 0.70 eV, obtained using other indirect methods. The obtained interface structure should prove useful for further study of the properties of CdTe/CdS heterostructures. Our work also presents an example which is applicable to other complex interfaces.
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Received: 02 July 2020
Published: 01 September 2020
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| PACS: |
68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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71.20.Nr
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(Semiconductor compounds)
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71.55.Gs
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(II-VI semiconductors)
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| Fund: Supported by the National Natural Science Foundation of China (Grant No. 11974078), the Fudan Start-up Funding (Grant No. JIH1512034), and the Shanghai Sailing Program (Grant No. 19YF1403100). |
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