| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Zirconium Aided Epitaxial Growth of In$_{x}$Se$_{y}$ on InP(111) Substrates |
| Cheng Zheng1, Dapeng Zhao1,2, Xinqiang Cai1, Wantong Huang1, Fanqi Meng3, Qinghua Zhang3, Lin Tang1, Xiaopeng Hu1, Lin Gu3, Shuai-Hua Ji1,4*, Xi Chen1* |
1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2Beijing Academy of Quantum Information Sciences, Beijing 100193, China
3Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
4RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
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| Cite this article: |
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Cheng Zheng, Dapeng Zhao, Xinqiang Cai et al 2020 Chin. Phys. Lett. 37 087401 |
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Abstract Layered material indium selenide (In$_{x}$Se$_{y}$) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In$_{x}$Se$_{y}$ layer emerges on top of the insulating ZrSe$_{2}$ layer. Different archetypes, such as InSe, $\alpha$-In$_{2}$Se$_{3}$ and $\beta$-In$_{2}$Se$_{3}$, are found in the In$_{x}$Se$_{y}$ layers. A negative magnetoresistance of 40% at 2 K under 9 T magnetic field is observed. Such an In$_{x}$Se$_{y}$/ZrSe$_{2}$ heterostructure with good lattice-matching may serve as a candidate for device applications.
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Received: 20 June 2020
Published: 02 July 2020
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| PACS: |
74.70.Xa
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(Pnictides and chalcogenides)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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74.78.Fk
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(Multilayers, superlattices, heterostructures)
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| Fund: Supported by the National Natural Science Foundation of China (Grant No. 11874233). |
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