| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-$\kappa$ Al$_{2}$O$_{3}$ Dielectrics on Graphene |
| Hang Yang1, Wei Chen2,3, Ming-Yang Li4, Feng Xiong3, Guang Wang1, Sen Zhang1, Chu-Yun Deng1*, Gang Peng1*, and Shi-Qiao Qin3 |
1College of Liberal Arts and Science, National University of Defense Technology, Changsha 410073, China
2China Aerodynamics Research and Development Center, Hypervelocity Aerodynamics Institute, Mianyang 621000, China
3College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
4College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China
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| Cite this article: |
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Hang Yang, Wei Chen, Ming-Yang Li et al 2020 Chin. Phys. Lett. 37 076801 |
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Abstract Due to the lack of surface dangling bonds in graphene, the direct growth of high-$\kappa$ films via atomic layer deposition (ALD) technique often produces the dielectrics with a poor quality, which hinders its integration in modern semiconductor industry. Previous pretreatment approaches, such as chemical functionalization with ozone and plasma treatments, would inevitably degrade the quality of the underlying graphene. Here, we tackled this problem by utilizing an effective and convenient physical method. In detail, the graphene surface was pretreated with the deposition of thermally evaporated ultrathin Al metal layer prior to the Al$_{2}$O$_{3}$ growth by ALD. Then the device was placed in a drying oven for 30 min to be naturally oxidized as a seed layer. With the assistance of an Al oxide seed layer, pinhole-free Al$_{2}$O$_{3}$ dielectrics growth on graphene was achieved. No detective defects or disorders were introduced into graphene by Raman characterization. Moreover, our fabricated graphene top-gated field effect transistor exhibited high mobility ($\sim $6200 cm$^{2}$V$^{-1}$s$^{-1}$) and high transconductance ($\sim $117 μS). Thin dielectrics demonstrated a relative permittivity of 6.5 over a large area and a leakage current less than 1.6 pA/μm$^{2}$. These results indicate that Al oxide functionalization is a promising pathway to achieve scaled gate dielectrics on graphene with high performance.
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Received: 29 March 2020
Published: 21 June 2020
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| PACS: |
68.65.Pq
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(Graphene films)
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72.80.Vp
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(Electronic transport in graphene)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Supported by Strengthening Project of Science and Technology Commission Foundation under Grant No. 2019JCJQZD. |
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