| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn$_{2}$Bi |
| Xuguang Wang1,2, Bingyu Xia3, Jian Gou1,2, Peng Cheng1,2, Yong Xu3, Lan Chen1,2**, Kehui Wu1,2,4** |
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
3Department of Physics, Tsinghua University, Beijing 100084, China
4Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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| Cite this article: |
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Xuguang Wang, Bingyu Xia, Jian Gou et al 2020 Chin. Phys. Lett. 37 066802 |
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Abstract The hydrogenation of two-dimensional (2D) systems can efficiently modify the physical and chemical properties of materials. Here we report a systematic study on the hydrogenation of 2D semiconductor Sn$_{2}$Bi on Si(111) by scanning tunneling microscopy experiments and first principle calculations. The unique butterfly-like and trench-like features were observed for single H adsorption sites and hydrogen-saturated surfaces respectively, from which the bridge-site adsorption geometry can be unambiguously determined. The structural model was further confirmed by the theoretical calculations, which is in good agreement with the experimental observation. In addition, the hydrogenation is found to vanish the flat band of Sn$_{2}$Bi and increase the band gap obviously.
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Received: 23 April 2020
Published: 26 May 2020
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| PACS: |
68.35.bg
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(Semiconductors)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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| Fund: *Supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0202700, 2016YFA0202301, and 2016YFA0300904), the National Natural Science Foundation of China (Grant Nos. 11761141013, 11674366, 11825405, and 11674368), the Beijing Municipal Natural Science Foundation (Grant No. Z180007), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30103000). |
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