| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Surface Oxygen Adsorption and Electric Property of Hydrogen-Terminated Single Crystal Diamonds by UV/ozone Treatment |
| Ming-Chao Yang , Lin-Feng Wan , Jing-Cheng Wang , Zi-Cheng Ma , Peng Wang , Nan Gao , Hong-Dong Li** |
| State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China |
|
| Cite this article: |
|
Ming-Chao Yang , Lin-Feng Wan , Jing-Cheng Wang et al 2020 Chin. Phys. Lett. 37 066801 |
|
|
|
|
Abstract Surface terminations of diamond play an important role in determining the electric properties of diamond-based electronic devices. We report an ultraviolet/ozone (UV/ozone) treatment process on hydrogen-terminated single crystal diamond (H-diamond) to modulate the carrier behavior related to varying oxygen adsorption on surfaces. By UV/ozone treatments, the induced oxygen radicals are chemically adsorbed on the H-terminated diamond and replace the original adsorbed H, which is analyzed by x-ray photoelectron spectroscopy. The concentration of oxygen adsorbed on surface increases from $\sim$3% to $\sim$8% with increasing the ozone treatment time from 20 s to 600 s. It is further confirmed by examining the wettability properties of the varying diamond surfaces, where the hydrophobic for H-termination transfers to hydrophilic for partly O-termination. Hall effect measurements show that the resistance (hole mobility) of the UV/ozone-treated H-diamond continuously increases (decrease) by two orders of magnitude with increasing UV/ozone treatment time from 20 s to 600 s. The results reveal that UV/ozone treatment becomes an efficient method to modulate the surface electrical properties of H-diamonds for further investigating the oxygenation effect on two-dimensional hole gas based diamond devices applied in some extreme environments.
|
|
|
Received: 27 February 2020
Published: 26 May 2020
|
|
|
|
|
| Fund: *Supported by the National Natural Science Foundation of China under Grant Nos. 51672102 and 51972135. |
|
|
|
| [1] | Nemanich R J, Carlisle J A, Hirata A and Haenen K 2014 MRS Bull. 39 490 |
| [2] | Koizumi S, Umezawa H, Pernot J and Suzuki M 2018 Power Electronics Device Applications of Diamond Semiconductors (Amsterdam: Woodhead Publishing) |
| [3] | Nebel C and Ristein J 2003 Thin-Film Diamond I: Part of the Semiconductors and Semimetals Series (Amsterdam: Elsevier Academic Press) |
| [4] | Kawarada H 2012 Jpn. J. Appl. Phys. 51 090111 |
| [5] | Satoshi K, Kenji W, Masataka H and Hisao K 2001 Science 292 1899 |
| [6] | Shur M, Gelmont B and AsifKhan M 1996 J. Electron. Mater. 25 777 |
| [7] | Nebel C, Sauerer C, Ertl F, Stutzmann M and Jackman R 2001 Appl. Phys. Lett. 79 4541 |
| [8] | Kazushi H, Sadanori Y, Hideyo O and Koji K 1996 Appl. Phys. Lett. 68 376 |
| [9] | Maier F, Riedel M, Mantel B, Ristein J and Ley L 2000 Phys. Rev. Lett. 85 3472 |
| [10] | Crawford K G, Qi D and McGlynn J 2018 Sci. Rep. 8 3342 |
| [11] | Kasu M 2017 Jpn. J. Appl. Phys. 56 01AA01 |
| [12] | Oing D, Geller M, Lorke A and Wöhrl N 2019 Diamond Relat. Mater. 97 107450 |
| [13] | Hu X J and Li N 2013 Chin. Phys. Lett. 30 088102 |
| [14] | Torrengo S and Minati L 2009 Diamond Relat. Mater. 18 804 |
| [15] | Kulisch W, Popov C, Gilliland D and Ceccone G 2010 Surf. Interface Anal. 42 1152 |
| [16] | López G P, Castner D G and Ratner B D 1991 Surf. Interface Anal. 17 267 |
| [17] | Kawarada H, Sasaki H and Sato A 1995 Phys. Rev. B 52 11351 |
| [18] | Sakai T, Song K S, Kanazawa H and Nakamura Y 2003 Diamond Relat. Mater. 12 1971 |
| [19] | Ma Z C, Gao N, Cheng S H, Liu J S, Yang M C, Wang P, Feng Z Y, Wang Q L and Li H D 2020 Chin. Phys. Lett. 37 046801 |
| [20] | Yang Y Z, Li H D, Cheng S H, Zou G T, Wang C X and Lin Q 2014 Chem. Commun. 50 2900 |
| [21] | Yu X X, Zhou J J, Zhang S, Cao Z Y, Kong Y C and Chen T S 2019 Appl. Phys. Lett. 115 192102 |
| [22] | Yuan X X, Gao N, Gao X, Qiu D C, Xu R, Sun Z L, Jiang Z G, Liu J S and Li H D 2019 Sens. Actuators B 281 830 |
| [23] | Strobel P, Riedel M, Ristein J and Ley L 2004 Nature 430 439 |
| [24] | Hirama K, Takayanagi H, Yamauchi S, Yang J H and Kawarada H 2008 Appl. Phys. Lett. 92 112107 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
