| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A 10 Gb/s 1.5 μm Widely Tunable Directly Modulated InGaAsP/InP DBR Laser |
| Dai-Bing Zhou1,2,3, Song Liang1,2,3**, Yi-Ming He1,2,3, Yun-Long Liu1,2,3, Wu Zhao1,2,3, Dan Lu1,2,3, Ling-Juan Zhao1,2,3, Wei Wang1,2,3 |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083, China
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| Cite this article: |
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Dai-Bing Zhou, Song Liang, Yi-Ming He et al 2020 Chin. Phys. Lett. 37 064201 |
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Abstract We report 10 Gb/s data transmissions using a packaged two-section InGaAsP/InP distributed Bragg reflector (DBR) laser. The tunable DBR laser has a wavelength tuning range of 12.12 nm. The DBR laser has greater than 10.84 GHz 3-dB direct modulation bandwidth within the wavelength tuning range. The 10 Gb/s data transmissions are performed at up to a distance of 30-km.
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Received: 10 February 2020
Published: 26 May 2020
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.07.St
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(Quantum wells)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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| Fund: *Supported by the National Key Research and Development Program of China (Grant Nos. 2017YFF0206103, 2016YFB0402301, and 2018YFB2200801) and the National Natural Science Foundation of China (Grant Nos. 61635010, 61320106013, 61474112, and 61574137). |
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