Chin. Phys. Lett.  2019, Vol. 36 Issue (7): 077202    DOI: 10.1088/0256-307X/36/7/077202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Pressure-Induced Ionic-Electronic Transition in BiVO$_{4}$
Shu-Peng Lyu, Jia Wang, Guo-Zhao Zhang, Yu-Fei Wang, Min Wang, Cai-Long Liu, Chun-Xiao Gao, Yong-Hao Han**
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012
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Shu-Peng Lyu, Jia Wang, Guo-Zhao Zhang et al  2019 Chin. Phys. Lett. 36 077202
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Abstract Electrical transport properties of bismuth vanadate (BiVO$_{4}$) are studied under high pressures with electrochemical impedance spectroscopy. A pressure-induced ionic-electronic transition is found in BiVO$_{4}$. Below 3.0 GPa, BiVO$_{4}$ has ionic conduction behavior. The ionic resistance decreases under high pressures due to the increasing migration rate of O$^{2-}$ ions. Above 3.0 GPa the channels for ion migration are closed. Transport mechanism changes from the ionic to the electronic behavior. First-principles calculations show that bandgap width narrows under high pressures, causing the continuous decrease of electrical resistance of BiVO$_{4}$.
Received: 27 February 2019      Published: 20 June 2019
PACS:  72.90.+y (Other topics in electronic transport in condensed matter)  
  61.50.Ks (Crystallographic aspects of phase transformations; pressure effects)  
  66.10.Ed (Ionic conduction)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11774126, 11774174 and 11404133.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/36/7/077202       OR      https://cpl.iphy.ac.cn/Y2019/V36/I7/077202
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Shu-Peng Lyu
Jia Wang
Guo-Zhao Zhang
Yu-Fei Wang
Min Wang
Cai-Long Liu
Chun-Xiao Gao
Yong-Hao Han
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