| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Suppressing Effects of Ag Wetting Layer on Surface Conduction of Er Silicide/Si(001) Nanocontacts |
| Qing Han1,2, Qun Cai1,2** |
1State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433
2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
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| Cite this article: |
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Qing Han, Qun Cai 2018 Chin. Phys. Lett. 35 087301 |
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Abstract Current-voltage electrical characteristics of Er silicide/Si(001) nanocontacts are measured in situ in a scanning tunneling microscopy system. Introduced as a new technique to suppress surface leakage conduction on Si(001), a silver wetting layer is evaporated onto the substrate surface kept at room temperature with ErSi$_{2}$ nanoislands already existing. The effects of the silver layer on the current-voltage characteristics of nanocontacts are discussed. Our experimental results reveal that the silver layer at coverage of 0.4–0.7 monolayer can suppress effectively the current contribution from the surface conduction path. After the surface leakage path of nanocontacts is obstructed, the ideality factor and the Schottky barrier height are determined using the thermionic emission theory, about 2 and 0.5 eV, respectively. The approach adopted here could shed light on the intrinsic transport properties of metal-semiconductor nanocontacts.
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Received: 03 April 2018
Published: 15 July 2018
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| PACS: |
73.63.Rt
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(Nanoscale contacts)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11374058. |
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