| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy |
| Ze-Ning XIONG, Xiang-Qian XIU**, Yue-Wen LI, Xue-Mei HUA, Zi-Li XIE, Peng CHEN, Bin LIU, Ping HAN, Rong ZHANG**, You-Dou ZHENG |
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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Ze-Ning XIONG, Xiang-Qian XIU, Yue-Wen LI et al 2018 Chin. Phys. Lett. 35 058101 |
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Abstract Two-inch Ga$_{2}$O$_{3}$ films with ($\bar{2}$01)-orientation are grown on $c$-sapphire at 850–1050$^{\circ}\!$C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure $\beta$-Ga$_{2}$O$_{3}$ with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in $\beta$-Ga$_{2}$O$_{3}$ grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.
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Received: 08 January 2018
Published: 30 April 2018
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| PACS: |
81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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68.55.-a
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(Thin film structure and morphology)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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78.30.-j
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(Infrared and Raman spectra)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFB0404201, the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center, PAPD, and the State Grid Shandong Electric Power Company. |
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