Chin. Phys. Lett.  2018, Vol. 35 Issue (5): 057801    DOI: 10.1088/0256-307X/35/5/057801
Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the $k\cdot p$ Model
Chang Wang1,2,3, Wenwu Pan2,3, Konstantin Kolokolov4, Shumin Wang1,2,5**
1Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210
3University of Chinese Academy of Sciences, Beijing 100190
4Faculty of Physics, M. V. Lomonosov Moscow State University, Moscow 119991, Russia
5Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden
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Chang Wang, Wenwu Pan, Konstantin Kolokolov et al  2018 Chin. Phys. Lett. 35 057801
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Abstract Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent $k\cdot p$ Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 μm lasers at room temperature because they can easily be used to obtain 1.3 μm for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.
Received: 04 January 2018      Published: 30 April 2018
PACS:  78.67.De (Quantum wells)  
  73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)  
  68.65.Fg (Quantum wells)  
  81.05.Ea (III-V semiconductors)  
Fund: Supported by the National Basic Research Program of China under Grant No 2014CB643902, the Key Program of Natural Science Foundation of China under Grant No 61334004, the National Natural Science Foundation of China under Grant No 61404152, and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1, the Foundation of National Laboratory for Infrared Physics, the Key Research Program of the Chinese Academy of Sciences under Grant No KGZD-EW-804, and the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492.
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Chang Wang
Wenwu Pan
Konstantin Kolokolov
Shumin Wang
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