| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Nonlinear Doping, Chemical Passivation and Photoluminescence Mechanism in Water-Soluble Silicon Quantum Dots by Mechanochemical Synthesis |
| Si-Min Huang1,2, Bo Qian2**, Ruo-Xi Shen2, Yong-Lin Xie2 |
1School of Materials Science and Engineering, Shanghai University, Shanghai 200444
2Inkjet Printing Technology Research Center, Printable Electronics Research Center, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215125
|
|
| Cite this article: |
|
Si-Min Huang, Bo Qian, Ruo-Xi Shen et al 2018 Chin. Phys. Lett. 35 036801 |
|
|
|
|
Abstract A series of boron- and phosphorus-doped silicon wafers are used to prepare a series of doped silicon nanocrystals (nc-Si) by high-energy ball milling with carboxylic acid-terminated surface. The sizes of the nc-Si samples are demonstrated to be $ < $5 nm. The doping levels of the nc-Si are found to be nonlinearly dependent on the original doping level of the wafers by x-ray photoelectron spectroscopy measurement. It is found that the nonlinear doping process will lead to the nonlinear chemical passivation and photoluminescence (PL) intensity evolution. The doping, chemical passivation and PL mechanisms of the doped nc-Si samples prepared by mechanochemical synthesis are analyzed in detail.
|
|
|
Received: 07 November 2017
Published: 25 February 2018
|
|
| PACS: |
68.35.bg
|
(Semiconductors)
|
| |
68.55.Ln
|
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
|
| |
81.05.Hd
|
(Other semiconductors)
|
| |
81.07.Bc
|
(Nanocrystalline materials)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China under Grant No 61575216. |
|
|
|
| [1] | Oliva-Chatelain B L, Ticich T M and Barron A R 2016 Nanoscale 8 1733 | | [2] | Li Y, Qian B, Sui Z and Jiang C 2013 Appl. Phys. Lett. 103 161908 | | [3] | Xie M, Yuan Z, Qian B and Pavesi L 2009 Chin. Opt. Lett. 7 319 | | [4] | Mastronardi M L, Henderson E J, Puzzo D P and Ozin G A 2012 Adv. Mater. 24 5890 | | [5] | Rowe D J, Jeong J S, Mkhoyan K A and Kortshagen U R 2013 Nano Lett. 13 1317 | | [6] | Zhou S, Pi X, Ni Z, Ding Y, Jiang Y, Jin C, Delerue C, Yang D and Nozaki T 2015 ACS Nano 9 378 | | [7] | Lu P, Mu W, Xu J, Zhang X, Zhang W, Li W, Xu L and Chen K 2016 Sci. Rep. 6 22888 | | [8] | Fukata N 2009 Adv. Mater. 21 2829 | | [9] | Heintz A S, Fink M J and Mitchell B S 2007 Adv. Mater. 19 3984 | | [10] | Perego M, Bonafos C and Faniulli M 2010 Nanotechnology 21 025602 | | [11] | Dalpian G M and Chelikowsky J R 2006 Phys. Rev. Lett. 96 226802 | | [12] | Dalpian G M and Chelikowsky J R 2008 Phys. Rev. Lett. 100 179703 | | [13] | Cho E C, Green M A, Conibeer G, Song D, Cho Y H, Sardera G, Huang S, Park S, Hao X J, Huang Y and Dao L V 2007 Adv. OptoElectron. 2007 69578 | | [14] | Xie M, Li D, Chen L, Wang F, Zhu X and Yang D 2013 Appl. Phys. Lett. 102 123108 | | [15] | Hao X J, Cho E C, Flynn C, Shen Y S, Conibeer G and Green M A 2008 Nanotechnology 19 424019 | | [16] | Clark R J, Dang M K M and Veinot J G C 2010 Langmuir 26 15657 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
