| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology |
| Meng-Ying Zhang1,2**, Zhi-Yuan Hu1, Zheng-Xuan Zhang1, Shuang Fan1,2, Li-Hua Dai1,2, Xiao-Nian Liu1,2, Lei Song1,2 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Meng-Ying Zhang, Zhi-Yuan Hu, Zheng-Xuan Zhang et al 2017 Chin. Phys. Lett. 34 088501 |
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Abstract An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13 μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions.
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Received: 16 May 2017
Published: 22 July 2017
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| PACS: |
85.30.-z
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(Semiconductor devices)
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61.80.-x
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(Physical radiation effects, radiation damage)
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07.87.+v
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(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
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| Fund: Supported by the Weapon Equipment Pre-Research Foundation of China under Grant No 9140A11020114ZK34147, and the Shanghai Municipal Natural Science Foundation under Grant Nos 15ZR1447100 and 15ZR1447200. |
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