| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors |
| Filippov V. V.1,2**, Mitsuk S.V.1 |
1Lipetsk State Pedagogical University of P. P. Semenov-Tyan-Shansky, Lipetsk 398020, the Russian Federation
2Lipetsk State Technical University, Lipetsk 398600, the Russian Federation
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| Cite this article: |
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Filippov V. V., Mitsuk S.V. 2017 Chin. Phys. Lett. 34 077201 |
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Abstract A macroscopic model of the magnetoresistance effect in limited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.
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Received: 23 March 2017
Published: 23 June 2017
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| PACS: |
72.80.Cw
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(Elemental semiconductors)
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Abstract
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