| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE |
| Xiao-Meng Zhao, Yang Zhang**, Li-Jie Cui, Min Guan, Bao-Qiang Wang, Zhan-Ping Zhu, Yi-Ping Zeng |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Xiao-Meng Zhao, Yang Zhang, Li-Jie Cui et al 2017 Chin. Phys. Lett. 34 076105 |
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Abstract We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface morphology and the electrical properties of InSb thin films are investigated. The InSb samples with room-temperature mobility of 44600 cm$^{2}$/Vs are grown under optimized growth conditions. The effect of defects in InSb epitaxial on the electrical properties is researched, and we infer that the formation of In vacancy (V$_{\rm In})$ and Sb anti-site (Sb$_{\rm In})$ defects is the main reason for concentrations changing with growth temperature and Sb$_{2}$/In flux ratios. The mobility of the InSb sample as a function of temperature ranging from 90 K to 360 K is demonstrated and the dislocation scattering mechanism and phonon scattering mechanism are discussed.
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Received: 12 January 2017
Published: 23 June 2017
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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68.55.-a
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(Thin film structure and morphology)
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73.61.-r
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(Electrical properties of specific thin films)
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| Fund: Supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2015094, the National Natural Science Foundation of China under Grant Nos 61204012, 61274049 and 61376058, the Beijing Natural Science Foundation under Grant Nos 4142053 and 4132070, and the Beijing Nova Program under Grant Nos 2010B056 and xxhz201503. |
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