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A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode |
| Xiao-Yu Liu1,2, Yong Zhang2**, De-Jiao Xia2, Tian-Hao Ren2, Jing-Tao Zhou1**, Dong Guo1, Zhi Jin1** |
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731
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| Cite this article: |
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Xiao-Yu Liu, Yong Zhang, De-Jiao Xia et al 2017 Chin. Phys. Lett. 34 070701 |
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Abstract A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV/mW at 630 GHz. The measured noise effective power (NEP) is less than 35 pW/Hz$^{0.5}$ at 570–630 GHz. The minimum NEP is 14 pW/Hz$^{0.5}$ at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
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Received: 02 March 2017
Published: 23 June 2017
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| PACS: |
07.57.-c
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(Infrared, submillimeter wave, microwave and radiowave instruments and equipment)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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84.40.Az
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(Waveguides, transmission lines, striplines)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61434006, and the Basic Application Research of Sichuan Province under Grant No 2017JY0227. |
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| [1] | Chen H, Sun Y M and Wang L 2009 Chin. Phys. B 18 4287 | | [2] | Woolard D L, Globus T R, Gelmont B L, Bykhovskaia M, Samuels A C, Cookmeyer D, Hesler J L, Crowe T W, Jensen J O, Jensen J L and Loerop W R 2002 Phys. Rev. E 65 051903 | | [3] | Griffiths P R and Homes C 2001 Office of Scientific Technical Information Technical Reports | | [4] | Sotoodeh M, Khalid A H and Rezazadeh A A 2000 J. Appl. Phys. 87 2890 | | [5] | Semenov A, Cojocari O, Hubers H W, Song F B, Klushin A and Muller A S 2010 IEEE Electron Device Lett. 31 674 | | [6] | Zhou J T, Yang C Y, Ge J and Jin Z 2013 J. Semicond. 34 064003 | | [7] | Yell R W 1969 Electron. Lett. 5 360 | | [8] | Tang A Y and Stake J 2011 IEEE Trans. Electron Devices 58 3260 | | [9] | Tang A Y, Drakinskiy V, Yhland K, Stenarson J, Bryllert T and Stake J 2013 IEEE Trans. Microwave Theory Tech. 61 1870 | | [10] | Yao C F, Zhou M, Luo Y S, Xu C H, Kou Y N and Chen Y G 2013 Tien Tzu HsuehPao/acta Electronica Sin. 41 438 | | [11] | Miao Y, Zhang Q J and Cai S 2011 Chin. Phys. Lett. 28 010702 |
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