| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
External Cavity Tuning of Coherent Quantum Cascade Laser Array Emitting at $\sim$7.6μm |
| Chuan-Wei Liu1,2, Jin-Chuan Zhang1,2**, Fang-Liang Yan1, Zhi-Wei Jia1,2, Zhi-Bin Zhao1,2, Ning Zhuo1,2**, Feng-Qi Liu1,2,3, Zhan-Guo Wang1,2 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083
3College of Materials Science and OptoElectronic Technology, University of Chinese Academy of Sciences, Beijing 100049
|
|
| Cite this article: |
|
Chuan-Wei Liu, Jin-Chuan Zhang, Fang-Liang Yan et al 2017 Chin. Phys. Lett. 34 034209 |
|
|
|
|
Abstract An external cavity quantum cascade laser (QCL) array with a wide tuning range and high output power is presented. The coherent QCL array combined with a diffraction grating and gold mirror is tuned in the Littrow configuration. Taking advantage of the single-lobed fundamental supermode far-field pattern, the tuning capability of 30.6 cm$^{-1}$ is achieved with a fixed injected current of 3.5 A at room temperature. Single-mode emission can be observed in the entire process. The maximum single-mode output power of the external cavity setup is as high as 25 mW and is essential in real applications.
|
|
|
Received: 08 October 2016
Published: 28 February 2017
|
|
|
|
|
| Fund: Supported by the National Basic Research Program of China under Grant No 2013CB632801, the National Key Research and Development Program of China under Grant No 2016YFB0402303, the National Natural Science Foundation of China under Grant Nos 61435014, 61627822, 61574136, 61306058 and 61404131, the Key Projects of Chinese Academy of Sciences under Grant No ZDRW-XH-2016-4, and the Beijing Natural Science Foundation under Grant No 4162060. |
|
|
|
| [1] | Kosterev A A and Tittel F K 2002 IEEE J. Quantum Electron. 38 582 | | [2] | Corrigan P, Martini R, Whittaker E A and Bethea C 2009 Opt. Express 17 4355 | | [3] | Mukherjee A, Prasanna M, Lane M, Go R, Dunayevskiy I, Tsekoun A and Patel C K N 2008 Appl. Opt. 47 4884 | | [4] | Wittmann A, Bonetti Y, Fischer M, Faist J, Blaser S and Gini E 2009 IEEE Photon. Technol. Lett. 21 814 | | [5] | Zhang J C, Liu F Q, Tan S, Yao D Y, Wang L J, Li L, Liu J Q and Wang Z G 2012 Appl. Phys. Lett. 100 112105 | | [6] | Zhang J C, Liu F Q, Yao D Y, Zhuo N, Wang L J, Liu J Q and Wang Z G 2013 J. Appl. Phys. 113 153101 | | [7] | Wittmann A, Giovannini M, Faist J, Hvozdara L and Blaser S 2006 Appl. Phys. Lett. 89 141116 | | [8] | Li Y Y, Xu G Y, Li A Z, Wei L, Li H and Mei B 2007 Chin. Phys. Lett. 24 2980 | | [9] | Young C, Cendejas R, Howard S S, Sanchez-Vaynshteyn W, Hoffman A J, Franz K J, Yao Y, Mizaikoff B, Wang X J, Fan J and Gmachl C F 2009 Appl. Phys. Lett. 94 091109 | | [10] | Hugi A, Maulini R and Faist J 2010 Semicond. Sci. Technol. 25 083001 | | [11] | Zhang J C, Wang L J, Liu W F, Liu F Q, Yin W, Liu J Q, Li L and Wang Z G 2011 Chin. Phys. Lett. 28 074203 | | [12] | Luo G P, Peng C, Le H Q, Pei S S, Hwang W Y, Ishaug B, Um J, Baillargeon J N and Lin C H 2001 Appl. Phys. Lett. 78 2834 | | [13] | Hugi A, Terazzi R, Bonetti Y, Wittmann A, Fischer M, Beck M, Faist J and Gini E 2009 Appl. Phys. Lett. 95 061103 | | [14] | Bandyopadhyay N, Bai Y, Slivken S and Razeghi M 2014 Appl. Phys. Lett. 105 071106 | | [15] | Vallon R, Parvitte B, Bizet L, Naurois G M D, Simozrag B, Maisons G, Carras M and Zeninari V 2016 Infrared Phys. Technol. 76 415 | | [16] | Liu Y H, Zhang J C, Yan F L, Liu F Q, Zhuo N, Wang L J, Liu J Q and Wang Z G 2015 Appl. Phys. Lett. 106 142104 | | [17] | Mammez D, Vallen R, Parvitte B, Mammez M H, Carras M and Zéninari V 2014 Appl. Phys. B 116 951 | | [18] | Maulini R, Yarekha D A, Bulliard J M, Giovannini M and Faist J 2005 Opt. Lett. 30 2854 | | [19] | Mroziewicz B 2008 Opto-Electron. Rev. 16 347 | | [20] | Yan F L, Zhang J C, Jia Z W, Zhuo N, Zhai S Q, Liu S M, Liu F Q and Wang Z G 2016 AIP Adv. 6 035022 | | [21] | Zhang J C, Wang L J, Liu W F, Liu F Q, Zhao L H, Zhai S Q, Liu J Q and Wang Z G 2012 J. Semicond. 33 024005 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
