| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Ballistic Transport through a Strained Region on Monolayer Phosphorene |
| Yi Ren, Fang Cheng** |
Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004
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| Cite this article: |
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Yi Ren, Fang Cheng 2017 Chin. Phys. Lett. 34 027302 |
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Abstract We investigate quantum transport of carriers through a strained region on monolayer phosphorene theoretically. The electron tunneling is forbidden when the incident angle exceeds a critical value. The critical angles for electrons tunneling through a strain region for different strengths and directions of the strains are different. Owing to the anisotropic effective masses, the conductance shows a strong anisotropic behavior. By tuning the Fermi energy and strain, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.
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Received: 12 November 2016
Published: 25 January 2017
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| PACS: |
73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11374002, the Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, and the Construct Program of the Key Discipline in Hunan Province. |
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