| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors |
| Xue-Feng Zheng1**, Ao-Chen Wang1, Xiao-Hui Hou2, Ying-Zhe Wang1, Hao-Yu Wen1, Chong Wang1, Yang Lu1, Wei Mao1, Xiao-Hua Ma1, Yue Hao1 |
1Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
2School of Computer Science and Technology, Xidian University, Xi'an 710071
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| Cite this article: |
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Xue-Feng Zheng, Ao-Chen Wang, Xiao-Hui Hou et al 2017 Chin. Phys. Lett. 34 027301 |
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Abstract The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors (HEMTs). In this work, the influence of the diamond layer on the electrical characteristics of AlGaN/GaN HEMTs is investigated by simulation. The results show that the lattice temperature can be effectively decreased by utilizing the diamond layer. With increasing the drain bias, the diamond layer plays a more significant role for lattice temperature reduction. It is also observed that the diamond layer can induce a negative shift of threshold voltage and an increase of transconductance. Furthermore, the influence of the diamond layer thickness on the frequency characteristics is investigated as well. By utilizing the 10-μm-thickness diamond layer in this work, the cutoff frequency $f_{\rm T}$ and maximum oscillation frequency $f_{\max}$ can be increased by 29% and 47%, respectively. These results demonstrate that the diamond layer is an effective technique for lattice temperature reduction and the study can provide valuable information for HEMTs in high-power and high-frequency applications.
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Received: 27 September 2016
Published: 25 January 2017
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Lw
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(Thermoelectric effects)
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73.61.Ey
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(III-V semiconductors)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61334002, 61474091, 61574110 and 61574112, the National Key Research and Development Plan of China under Grant No 2016YFB0400205, the 111 Project of the Ministry of Education of China under Grant No B12026, and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the Ministry of Education of China under Grant No JY0600132501. |
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| [1] | Liu S H, Cai Y, Gong R M, Wang J Y, Zeng C H, Shi W H, Feng Z H, Wang J J, Yin J Y, Cheng P W, Qin H and Zhang B S 2011 Chin. Phys. Lett. 28 077202 | | [2] | Wang Y, Yu N S, Li M and Lau K M 2011 Chin. Phys. Lett. 28 057102 | | [3] | Zhang G C, Feng S W, Hu P F, Zhao Y, Guo C S, Xu Yang, Chen T S and Jiang Y J 2011 Chin. Phys. Lett. 28 017201 | | [4] | Wang J H, Wang X H, Pang L, Chen X J and Liu X Y 2012 Chin. Phys. Lett. 29 088502 | | [5] | Tadjer M J, Anderson T J, Hobart K D, Feygelson T I, Mastro M A, Caldwell J D, Hite J K, Eddy C R, Jr., Kub F J, Butler J E and Melngailis J 2010 Device Res. Conf. IEEE 125 | | [6] | Turin V O and Balandin A A 2006 J. Appl. Phys. 100 054501 | | [7] | Sarua A, Ji H, Kuball M, Uren M J, Martin T, Hilton K P and Balmer R S 2006 IEEE Trans. Electron Devices 53 2438 | | [8] | Francis D, Faili F, Babić D, Ejeckam F, Nurmikko A and Maris H 2010 Diamond Relat. Mater. 19 229 | | [9] | Anderson T J, Tadjer M J, Hobart K D, Feygelson T I, Caldwell J D, Mastro M A, Hite J K, Eddy C R, Kub F J, Butler J E and Pate B B 2011 IEEE Semiconductor Device Research Symposium (College Park, MD, USA 7–9 December 2011) p 1 | | [10] | Wang A, Tadjer M J and Calle F 2013 Semicond. Sci. Technol. 28 055010 | | [11] | Shen Y F 2011 MSc Dissertation (Shandong: Shandong University) (in Chinese) | | [12] | Grishakov K S, Elesin V F, Ryzhuk R V, Kargin N I and Minnebaev S V 2015 Phys. Procedia 72 460 | | [13] | Das J, Oprins H, Ji H, Sarua A, Ruythooren W, Derluyn J, Kuball M, Germain M and Borghs G 2006 IEEE Trans. Electron Devices 53 2696 | | [14] | Wang A, Tadjer M J, Anderson T J, Baranyai R, Pomeroy J W, Feygelson T I, Hobart K D, Pate B B, Fernando C and Kuball M 2013 IEEE Trans. Electron Devices 60 3149 | | [15] | Tadjer M J, Anderson T J, Hobart K D, Feygelson T I, Caldwell J D, Eddy C R, Kub F J, Butler J E and Melngailis J 2012 IEEE Electron Device Lett. 33 23 | | [16] | Anderson T J, Hobart K D, Tadjer M J, Koehler A D, Feygelson T I, Hite J K, Pate B B, Kub F J and Eddy C R 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (New Orleans USA 13–16 October 2015) p 1 |
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