Total-Ionizing-Dose-Induced Body Current Lowering in the 130nm PDSOI I/O NMOSFETs

doi:10.1088/0256-307X/34/1/016103

Chin. Phys. Lett.

2017, Vol. 34

Issue (1): 016103 DOI: 10.1088/0256-307X/34/1/016103

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Total-Ionizing-Dose-Induced Body Current Lowering in the 130nm PDSOI I/O NMOSFETs

Xiao-Nian Liu^1,2**, Li-Hua Dai^1,2, Bing-Xu Ning¹, Shi-Chang Zou¹

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
²University of Chinese Academy of Sciences, Beijing 100049

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Xiao-Nian Liu, Li-Hua Dai, Bing-Xu Ning et al 2017 Chin. Phys. Lett. 34 016103

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Abstract The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current $I_{\rm b}/I_{\rm d}$ is also investigated. Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer (BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.

Received: 29 August 2016 Published: 29 December 2016

PACS:	61.80.Az	(Theory and models of radiation effects)
	61.80.Ed	(γ-ray effects)
	61.82.Fk	(Semiconductors)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/34/1/016103 OR https://cpl.iphy.ac.cn/Y2017/V34/I1/016103

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	Xiao-Nian Liu
	Li-Hua Dai
	Bing-Xu Ning
	Shi-Chang Zou

[1]	Ma Z J, Wann H J, Chan M et al 1994 IEEE Reliability Physics Symposium p 52
[2]	Huang H X, Bi D W, Peng C et al 2013 Chin. Phys. Lett. 30 080701
[3]	Huang J Q, He W W, Chen J et al 2016 Chin. Phys. Lett. 33 096101
[4]	Schwank J 2002 IEEE NSREC Short Course p 123
[5]	Shaneyfelt M R et al 1998 IEEE Trans. Nucl. Sci. 45 2584
[6]	Zebrev G I and Gorbunov M S 2009 IEEE Trans. Nucl. Sci. 56 2230
[7]	Hu C M 1983 IEEE Int. Electron Devices Meet. Tech. Dig. 83 176
[8]	Peng C, Hu Z Y, Ning B X et al 2014 IEEE Electron Device Lett. 35 503
[9]	Slotboom J W, Streutker G et al 1987 IEEE Int. Electron Devices Meet. Tech. Dig. 87 494
[10]	Chan T Y, Ko P K and Hu C M 1984 IEEE Electron Device Lett. 5 505
[11]	Chan T Y, Ko P K and Hu C M 1985 IEEE Electron Device Lett. 6 551
[12]	Wann H J, King J, Chen J, Ko P K, Hu C M 1993 IEEE SOI Conf. p 118

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