| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers |
| Jun Luo1, Sheng-Lei Zhao1, Zhi-Yu Lin1, Jin-Cheng Zhang1, Xiao-Hua Ma1,2, Yue Hao1** |
1Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
2School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071
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| Cite this article: |
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Jun Luo, Sheng-Lei Zhao, Zhi-Yu Lin et al 2016 Chin. Phys. Lett. 33 067301 |
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Abstract A novel AlGaN/GaN high electron mobility transistor (HEMT) with double buried p-type layers (DBPLs) in the GaN buffer layer and its mechanism are studied. The DBPL AlGaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate–drain length of 8 μm.
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Received: 10 January 2016
Published: 30 June 2016
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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78.30.Fs
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(III-V and II-VI semiconductors)
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