| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Bipolar Resistive Switching in Epitaxial Mn$_{3}$O$_{4}$ Thin Films on Nb-Doped SrTiO$_{3}$ Substrates |
| Xu-Bo Lai1, Yu-Hang Wang2, Xiao-Lan Shi3, Dong-Yong Li3, Bo-Yang Liu3, Rong-Ming Wang1, Liu-Wan Zhang3** |
1Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191
2National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621999
3State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084
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| Cite this article: |
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Xu-Bo Lai, Yu-Hang Wang, Xiao-Lan Shi et al 2016 Chin. Phys. Lett. 33 067202 |
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Abstract Spinel (001)-orientated Mn$_{3}$O$_{4}$ thin films on Nb-doped SrTiO$_{3}$ (001) substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized. In the film plane the orientation relationship between the film and the substrate is [100]Mn$_{3}$O$_{4}$$\parallel$[110] Nb-doped SrTiO$_{3}$. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn$_{3}$O$_{4}$ might be a promising candidate for the resistive random access memory devices.
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Received: 13 February 2016
Published: 30 June 2016
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| PACS: |
72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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72.80.Ga
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(Transition-metal compounds)
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73.61.Le
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(Other inorganic semiconductors)
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