| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser |
| Song-Tao Liu**, Rui-Kang Zhang, Dan Lu, Qiang Kan, Wei Wang, Chen Ji |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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Song-Tao Liu, Rui-Kang Zhang, Dan Lu et al 2016 Chin. Phys. Lett. 33 064205 |
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Abstract A monolithically active–passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time–bandwidth product of 0.53 are obtained.
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Received: 16 February 2016
Published: 30 June 2016
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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