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A High Performance Terahertz Waveguide Detector Based on a Low-Barrier Diode |
| Tian-Hao Ren1,2, Yong Zhang2**, Bo Yan2, Rui-Min Xu2, Cheng-Yue Yang1, Jing-Tao Zhou1**, Zhi Jin1** |
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731
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| Cite this article: |
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Tian-Hao Ren, Yong Zhang, Bo Yan et al 2016 Chin. Phys. Lett. 33 060701 |
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Abstract A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500–600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 500–560 GHz and is about 400 V/W at 560–600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
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Received: 07 March 2016
Published: 30 June 2016
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| PACS: |
07.57.-c
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(Infrared, submillimeter wave, microwave and radiowave instruments and equipment)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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84.40.Az
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(Waveguides, transmission lines, striplines)
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