| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells |
| Yong Zheng1, Tian-Cheng Yi1, Peng-Fei Xiao1, Juan Tang1, Rong Wang1,2** |
1Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875
2Beijing Radiation Center, Beijing 100875
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| Cite this article: |
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Yong Zheng, Tian-Cheng Yi, Peng-Fei Xiao et al 2016 Chin. Phys. Lett. 33 056102 |
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Abstract Photoluminescence measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of $1\times10^{15}$ cm$^{-2}$. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescence radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58 eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.
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Received: 04 January 2016
Published: 31 May 2016
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