| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition |
| Ru-Dai Quan, Jin-Cheng Zhang**, Sheng-Rui Xu, Jun-Shuai Xue, Yi Zhao, Jing Ning, Zhi-Yu Lin, Ze-Yang Ren, Yue Hao |
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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Ru-Dai Quan, Jin-Cheng Zhang, Sheng-Rui Xu et al 2016 Chin. Phys. Lett. 33 048101 |
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Abstract Epitaxial growth of InAlGaN/GaN structures are performed on the $c$-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium (TEGa) flows in the growth process of InAlGaN quaternary alloys. X-ray photoelectron spectroscopy results show that the Al/In ratio of the samples increases as the TEGa flows increase in the InAlGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InAlGaN/GaN heterostructures is characterized by an atomic force microscopy, and the growth mode of the InAlGaN quaternary shows a 2D island growth mode. The minimum surface roughness is 0.20 nm with the TEGa flows equaling to 3.6 $\mu$mol/min in rms. Hall effect measurement results show that the highest electron mobility $\mu$ is 1005.49 cm$^{2}$/Vs and the maximal two-dimensional electron gas is $1.63\times10^{13}$ cm$^{-2}$.
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Received: 22 December 2015
Published: 29 April 2016
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| PACS: |
81.05.Bx
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(Metals, semimetals, and alloys)
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81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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