| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High-Mobility P-Type MOSFETs with Integrated Strained-Si$_{0.73}$Ge$_{0.27}$ Channels and High-$\kappa$/Metal Gates |
| Shu-Juan Mao1, Zheng-Yong Zhu2**, Gui-Lei Wang1, Hui-Long Zhu1, Jun-Feng Li1, Chao Zhao1 |
1Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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| Cite this article: |
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Shu-Juan Mao, Zheng-Yong Zhu, Gui-Lei Wang et al 2016 Chin. Phys. Lett. 33 118502 |
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Abstract Strained-Si$_{0.73}$Ge$_{0.27}$ channels are successfully integrated with high-$\kappa $/metal gates in p-type metal-oxide- semiconductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si$_{0.73}$Ge$_{0.27}$ and high-$\kappa$ dielectric to improve the interface. The fabricated Si$_{0.73}$Ge$_{0.27}$ pMOSFETs with gate length of 30 nm exhibit good performance with high drive current ($\sim$428 $\mu$A/μm at $V_{\rm DD}=1$ V) and suppressed short-channel effects (DIBL$\sim $77 mV/V and SS$\sim$90 mV/decade). It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si$_{0.73}$Ge$_{0.27}$-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si$_{0.73}$Ge$_{0.27}$ devices.
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Received: 22 August 2016
Published: 28 November 2016
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Supported by the National Basic Research Program of China under Grant No 2011CBA00605, and the National Natural Science Foundation of China under Grant No 61404165. |
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