| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Storage Cell Circuit with Memristor Characteristics of Poly(N-Vinylcarbazole) Films |
| LI Lei, SUN Yan-Mei, WEN Dian-Zhong** |
Key Laboratory of Electronic Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080
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| Cite this article: |
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LI Lei, SUN Yan-Mei, WEN Dian-Zhong 2015 Chin. Phys. Lett. 32 078501 |
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Abstract A kind of non?conjugated polymer memory material, poly(N-vinylcarbazole), is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-tin-oxide/poly(N-vinylcarbazole)/Al and an n-type metal-oxide-semiconductor field effect transistor. The memristor on the basis of a nano poly(N-vinylcarbazole) film exhibits electrical bistability and flash memory features, for which the switching-on voltage is -1 V and the on/off current ratio approaches 104. At ambient temperature, the memory circuit possesses higher reliability within the programming time 104 s. The output voltage is close to 0.5 V during logic 1, while it is approximately 14 mV in the logic 0. This paves the way for the study on the technology concerning the binary encoding and data storage of nonvolatile memories.
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Received: 26 January 2015
Published: 30 July 2015
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| PACS: |
85.25.Hv
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(Superconducting logic elements and memory devices; microelectronic circuits)
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73.61.Ph
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(Polymers; organic compounds)
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82.35.Lr
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(Physical properties of polymers)
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