Chin. Phys. Lett.  2015, Vol. 32 Issue (07): 077804    DOI: 10.1088/0256-307X/32/7/077804
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires
YANG Shuang, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan**
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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YANG Shuang, DOU Xiu-Ming, YU Ying et al  2015 Chin. Phys. Lett. 32 077804
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Abstract A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g(2)(0) at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires.
Received: 07 March 2015      Published: 30 July 2015
PACS:  78.55.Cr (III-V semiconductors)  
  78.67.Hc (Quantum dots)  
  81.07.Gf (Nanowires)  
  42.72.-g (Optical sources and standards)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/7/077804       OR      https://cpl.iphy.ac.cn/Y2015/V32/I07/077804
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YANG Shuang
DOU Xiu-Ming
YU Ying
NI Hai-Qiao
NIU Zhi-Chuan
JIANG De-Sheng
SUN Bao-Quan
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