Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

doi:10.1088/0256-307X/32/7/077803

Chin. Phys. Lett.

2015, Vol. 32

Issue (07): 077803 DOI: 10.1088/0256-307X/32/7/077803

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

YANG Shuang, DING Kun, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan^**

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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YANG Shuang, DING Kun, DOU Xiu-Ming et al 2015 Chin. Phys. Lett. 32 077803

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Abstract Band structure of wurtzite (WZ) GaAs nanowires (NWs) is investigated by using photoluminescence measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV, corresponding to the optical transition between conduction band Γ_7C and valence band Γ_9V in WZ GaAs. The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.

Received: 27 February 2015 Published: 30 July 2015

PACS:	78.55.Cr	(III-V semiconductors)
	73.21.Hb	(Quantum wires)
	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/7/077803 OR https://cpl.iphy.ac.cn/Y2015/V32/I07/077803

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	YANG Shuang
	DING Kun
	DOU Xiu-Ming
	YU Ying
	NI Hai-Qiao
	NIU Zhi-Chuan
	JIANG De-Sheng
	SUN Bao-Quan

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