| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz |
| NIU Bin12, WANG Yuan1, CHENG Wei1**, XIE Zi-Li2, LU Hai-Yan1, CHANG Long1, XIE Jun-Ling1 |
1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016
2Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
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| Cite this article: |
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NIU Bin, WANG Yuan, CHENG Wei et al 2015 Chin. Phys. Lett. 32 077304 |
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Abstract A common base four-finger InGaAs/InP double heterojunction bipolar transistor with 535 GHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain (MSG/MAG) and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.
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Received: 28 February 2015
Published: 30 July 2015
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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71.55.Eq
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(III-V semiconductors)
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