| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs |
| HUANG Xiao-Ming1, WU Chen-Fei2, LU Hai2**, REN Fang-Fang2, ZHU Hong-Bo1, WANG Yong-Jin1** |
1Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003
2Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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HUANG Xiao-Ming, WU Chen-Fei, LU Hai et al 2015 Chin. Phys. Lett. 32 077303 |
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Abstract The effect of oxygen partial pressure (PO2) during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated. As PO2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies (OV) within the a-IGZO layer is suppressed by increasing PO2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing PO2. Therefore, the improved interface quality with increasing PO2 during the channel layer deposition can be attributed to the reduction of interface OV-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.
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Received: 06 April 2015
Published: 30 July 2015
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| PACS: |
73.61.Jc
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(Amorphous semiconductors; glasses)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.20.At
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(Surface states, band structure, electron density of states)
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79.40.+z
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(Thermionic emission)
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[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[2] Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T and Hosono H 2006 Appl. Phys. Lett. 89 112123
[3] Lee J, Park J S, Pyo Y S, Lee D B, Kim E H, Stryakhilev D, Kim T W, Jin D U and Mo Y G 2009 Appl. Phys. Lett. 95 123502
[4] Jeong J K, Yang H W, Jeong J H, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 93 123508
[5] Lee S Y, Kim D H, Chong E, Jeon Y W and Kim D H 2011 Appl. Phys. Lett. 98 122105
[6] Seo S J, Jeon J H, Hwang Y H and Bae B S 2011 Appl. Phys. Lett. 99 152102
[7] Ide K, Kikuchi Y, Nomuar K, Kimura M, Kamiya T and Hosono H 2011 Appl. Phys. Lett. 99 093507
[8] Chiu C J, Pei Z W, Chang S T, Chang S P and Chang S J 2011 Vacuum 86 246
[9] Takagi A, Nomura K, Ohta H, Kamiya T, Hirano M and Hosono H 2005 Thin Solid Films 486 38
[10] Lee J M, Cho I T, Lee J H, Cheong W S, Hwang C S and Kwon H I 2009 Appl. Phys. Lett. 94 222112
[11] Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[12] Huang X M, Wu C F, Lu H, Xu Q Y, Zhang R and Zheng Y D 2012 Chin. Phys. Lett. 29 067302
[13] Huang X M, Wu C F, Lu H, Ren F F, Chen D J, Zhang R and Zheng Y D 2013 Appl. Phys. Lett. 102 193505
[14] Yang S, Ji K H, Kim U K, Hwang C S, Park S K, Hwang C S, Jang J and Jeong J K 2011 Appl. Phys. Lett. 99 102103
[15] Lee K W, Kim K M, Heo K Y, Park S K, Lee S K and Kim H J 2011 Curr. Appl. Phys. 11 280
[16] Jeon S, Kim S I, Park S, Song I, Park J, Kim S and Kim C 2010 IEEE Electron Device Lett. 27 1128
[17] Giusi G, Crupi F, Pace C, Ciofi C and Groeseneken G 2006 IEEE Trans. Electron Devices 53 823
[18] Choi H S, Jeon S, Kim H, Shin J, Kim C and Chung U I 2011 Appl. Phys. Lett. 98 183502
[19] Magnone P, Crupi F, Giusi G, Pace C, Simoen E, Claeys C, Pantisano L, Maji D, Rao V R and Srinivasan P IEEE Trans. Device Mater. Reliab. 9 180
[20] Hung K K, Ko P K, Hu C and Cheng Y C 1990 IEEE Trans. Electron Devices 37 654
[21] Lina G R, Lin C J and Kuo H C 2007 Appl. Phys. Lett. 91 093122
[22] Christensson S, Lundstr?m I and Svensson C 1968 Solid-State Electron. 11 797
[23] Douglas E A, Scheurmann A, Davies R P, Gila B P, Cho H, Craciun V, Lambers E S, Pearton S J and Ren F 2011 Appl. Phys. Lett. 98 242110
[24] Kim B, Chong E, Kim D H, Jeon Y W, Kim D H and Lee1 S Y 2010 Appl. Phys. Lett. 97 022108
[25] Kim D H, Yoo D Y, Jung H K, Kim D H and Lee S Y 2011 Appl. Phys. Lett. 99 172106 |
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