| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application |
| ZHU Yue-Qin1,2, ZHANG Zhong-Hua2, SONG San-Nian2**, XIE Hua-Qing1, SONG Zhi-Tang2, SHEN Lan-Lan2, LI Le2, WU Liang-Cai2, LIU Bo2 |
1School of Environmental and Materials Engineering, Shanghai Second Polytechnic University, Shanghai 201209
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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ZHU Yue-Qin, ZHANG Zhong-Hua, SONG San-Nian et al 2015 Chin. Phys. Lett. 32 077302 |
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Abstract The phase change material of Ge-doped Sb2Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2Te5. In addition, Ge0.11Sb2Te3 presents extremely rapid reverse switching speed (10 ns), and up to 105 programming cycles are obtained with stable set and reset resistances.
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Received: 27 October 2014
Published: 30 July 2015
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| PACS: |
73.50.Lw
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(Thermoelectric effects)
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81.15.Cd
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(Deposition by sputtering)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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