| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Memory Behaviors Based on ITO/Graphene Oxide/Al Structure |
| YI Ming-Dong1,2, GUO Jia-Lin1, HU Bo1, XIA Xian-Hai1, FAN Qu-Li1, XIE Ling-Hai1**, HUANG Wei1,2** |
1Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023
2Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816
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| Cite this article: |
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YI Ming-Dong, GUO Jia-Lin, HU Bo et al 2015 Chin. Phys. Lett. 32 077201 |
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Abstract We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the Al electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/Al diodes are ascribed to the mode and degree of reduction and oxidation of GO.
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Received: 31 March 2015
Published: 30 July 2015
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| PACS: |
72.80.Vp
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(Electronic transport in graphene)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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68.55.J-
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(Morphology of films)
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