FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance |
XIAO Peng-Bo, ZHANG Wei, QU Tian-Liang**, HUANG Yun, HU Shao-Min |
College of Opto-electric Science and Engineering, National University of Defence Technology, Changsha 410073
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Cite this article: |
XIAO Peng-Bo, ZHANG Wei, QU Tian-Liang et al 2015 Chin. Phys. Lett. 32 074204 |
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Abstract Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consumption is a significant issue for information technology. Here we design an 'electrically written and optically read' information storage device employing BiFeO3/Au heterostructures with strong absorption resonance. The electro-optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a simulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read information storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.
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Received: 03 April 2015
Published: 30 July 2015
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PACS: |
42.79.Vb
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(Optical storage systems, optical disks)
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78.20.Jq
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(Electro-optical effects)
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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Abstract
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