| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array |
| WANG Xiao-Bo1,2, LI Yong3, YAN Ling-Ling1,4, LI Xin-Jian1** |
1Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052
2College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000
3Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000
4College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000
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| Cite this article: |
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WANG Xiao-Bo, LI Yong, YAN Ling-Ling et al 2015 Chin. Phys. Lett. 32 057801 |
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Abstract A GaN/Si nanoheterostructure is prepared by growing wurtzite GaN on a silicon nanoporous pillar array (Si-NPA) with a chemical vapor deposition method. The temperature evolution of the photoluminescence (PL) of GaN/Si-NPA is measured and the PL mechanism is analyzed. It is found that the PL spectrum is basically composed of two narrow ultraviolet peaks and a broad blue peak, corresponding to the near band edge emission of GaN and its phonon replicas, and the emission from Si-NPA. No GaN defect-related PL is observed in the as-prepared GaN/Si-NPA. Our experiments prove that Si-NPA might be an ideal substrate for preparing high-quality Si-based GaN nanomaterials or nanodevices.
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Received: 31 January 2015
Published: 01 June 2015
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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78.60.Lc
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(Optically stimulated luminescence)
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78.67.Bf
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(Nanocrystals, nanoparticles, and nanoclusters)
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