| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy |
| LI Ming-Ying1, LIU Zheng-Tai1, YANG Hai-Feng1, ZHAO Jia-Lin1, YAO Qi1,2, FAN Cong-Cong1, LIU Ji-Shan1, GAO Bo1, SHEN Da-Wei1**, XIE Xiao-Ming1 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050
2State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433
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| Cite this article: |
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LI Ming-Ying, LIU Zheng-Tai, YANG Hai-Feng et al 2015 Chin. Phys. Lett. 32 057402 |
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Abstract By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped (Sr1?xLax)2IrO4 (001) (x=0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2IrO4.
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Received: 16 April 2015
Published: 01 June 2015
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| PACS: |
71.20.-b
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(Electron density of states and band structure of crystalline solids)
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71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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73.21.Ac
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(Multilayers)
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77.55.Px
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(Epitaxial and superlattice films)
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