| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model |
| FANG Yu-Long1,2, FENG Zhi-Hong2**, LI Cheng-Ming1, SONG Xu-Bo2, YIN Jia-Yun2, ZHOU Xing-Ye2, WANG Yuan-Gang2, LV Yuan-Jie2, CAI Shu-Jun2 |
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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| Cite this article: |
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FANG Yu-Long, FENG Zhi-Hong, LI Cheng-Ming et al 2015 Chin. Phys. Lett. 32 037202 |
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Abstract We report on the temperature-dependent dc performance of AlGaN/GaN polarization doped field effect transistors (PolFETs). The rough decrements of drain current and transconductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transconductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.
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Published: 26 February 2015
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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