| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films |
| PANG Fei** |
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872
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| Cite this article: |
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PANG Fei 2015 Chin. Phys. Lett. 32 027402 |
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Abstract Magneto-transport properties of insulating bulk states in Bi(111) films are systematically investigated under the parallel field (B||). We find that the magnetotransport of the B|| field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance (MR) up to 20% in the B|| field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR(B||) from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 10 nm, the positive MR(B||) is induced by weak anti-localization from the surface states.
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Published: 20 January 2015
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| PACS: |
74.25.F-
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(Transport properties)
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71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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73.20.-r
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(Electron states at surfaces and interfaces)
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