| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Ultralow-Voltage Electric-Double-Layer Oxide-Based Thin-Film Transistors with Faster Switching Response on Flexible Substrates |
| ZHANG Jin1,3, WU Guo-Dong2,3** |
1Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
3Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201
|
|
| Cite this article: |
|
ZHANG Jin, WU Guo-Dong 2014 Chin. Phys. Lett. 31 078502 |
|
|
|
|
Abstract Phosphosilicate glass (PSG) electrolyte films are deposited by improving the content of phosphorus doping during plasma-enhanced chemical vapor deposition, and a fast electric-double-layer (EDL) polarization response of 100 kHz is measured. The mechanism of the fast polarization response and EDL formation are investigated in detail. By using PSG electrolyte films as gate dielectrics, indium-zinc-oxide (IZO) thin-film transistors (TFTs) are fabricated on flexible plastic substrates. Due to the huge EDL gate capacitance, such TFTs show only 0.8 V operation and excellent electrical performances with a large current on/off ratio of 107, low subthreshold swing of 72 mV/decade and high field-effect mobility of 16.76 cm2/V?s. More importantly, the devices exhibit a fast switching response above 100 Hz. Our results demonstrate that such PSG gated TFTs take a great step for low-power flexible oxide electronics application.
|
|
|
Published: 30 June 2014
|
|
| PACS: |
85.35.-p
|
(Nanoelectronic devices)
|
| |
79.60.Jv
|
(Interfaces; heterostructures; nanostructures)
|
| |
73.61.Jc
|
(Amorphous semiconductors; glasses)
|
|
|
|
|
|
[1] Sun Y G and Rogers J A 2007 Adv. Mater. 19 1897
[2] Kim J B, Fuentes H C and B Kippelen 2008 Appl. Phys. Lett. 93 242111
[3] Fallahazad B, Lee K, Lian G, Kim S, Corbet C M, Ferrer D A, Colombo L and Tutuc E 2012 Appl. Phys. Lett. 100 093112
[4] Kim D H, Cho N G, Kim H G, Kim H S, Hong J M and Kim I D 2008 Appl. Phys. Lett. 93 032901
[5] Kim S H, Hong K, Xie W, Lee K H, Zhang S P, Lodge T P and Frisbie C D 2013 Adv. Mater. 25 1822
[6] Lee J, Panzer M J, He Y Y, Lodge T P and C D Frisbie 2007 J. Am. Chem. Soc. 129 4532
[7] Lee J, Kaake L G, Cho J H, Zhu X Y, Lodge T P and Frisbie C D 2009 J. Phys. Chem. C 113 8972
[8] Sun J, Wan Q, Lu A X and Jiang J 2009 Appl. Phys. Lett. 95 222108
[9] Lu A X, Dai M Z, Sun J, Jiang J and Wan Q 2011 IEEE Electron Device Lett. 32 518
[10] Zhu D M, Men C L, Cao M and Wu G D 2013 Acta Phys. Sin. 62 117305 (in Chinese)
[11] Wu G D, Zhou J M, Zhang H L, Zhu L Q and Wan Q 2012 IEEE Electron Device Lett. 33 1720
[12] Norby T 1999 Solid State Ionics 125 1
[13] Zhu L Q, Wu G D, Zhou J M, Zhang H L and Wan Q 2012 IEEE Electron Device Lett. 33 1723
[14] Nogami M, Tarutani Y, Daiko Y, Izuhara S, Nakao T and Kasuga T 2004 J. Electrochem. Soc. 151 A2095 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
