| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A Graphene-Based Passively Q-Switched Ho:YAG Laser |
| YAO Bao-Quan, CUI Zheng, DUAN Xiao-Ming**, SHEN Ying-Jie, WANG Ji, DU Yan-Qiu |
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
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| Cite this article: |
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YAO Bao-Quan, CUI Zheng, DUAN Xiao-Ming et al 2014 Chin. Phys. Lett. 31 074204 |
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Abstract A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.
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Published: 30 June 2014
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| PACS: |
42.60.Gd
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(Q-switching)
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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78.67.Wj
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(Optical properties of graphene)
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